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  savantic semiconductor product specification silicon npn power transistors 2SD1492 d escription with to-3pn package high voltage ,high reliability wide area of safe operation applications high voltage power switching tv horizontal deflection output applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 600 v v ebo emitter-base voltage open collector 6 v i c collector current 1.5 a p c collector power dissipation t c =25 50 w t j junction temperature 150  t stg storage temperature -45~150  fig.1 simplified outline (to-3pn) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SD1492 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ebo emitter-base breakdown voltage i e =10ma; i c =0 6 v v (br)ceo collector-emitter breakdown voltage i c =10ma; r be = : 600 v v cesat collector-emitter saturation voltage i c =1.2a; i b =0.3a 5.0 v v besat base-emitter saturation voltage i c =1.2a; i b =0.3a 1.5 v i cex collector cut-off current v ce =1500v; v be =1.5v 1.0 ma i ebo emitter cut-off current v eb =6v; i c =0 1.0 ma h fe dc current gain i c =0.3a ; v ce =5v 10 30
savantic semiconductor product specification 3 silicon npn power transistors 2SD1492 package outline fig.2 outline dimensions (unindicated tolerance:0.10 mm)


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